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Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia, the expert in essential semiconductors, has announced a range of new silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes.

Targeting automotive, communications infrastructure and server markets, the new 1-3 A SiGe rectifiers are of particular benefit in high-temperature applications like LED lighting, engine control units or fuel injection. Design engineers using the new, extremely low leakage devices can now rely on an extended safe-operating area with no thermal runaway up to 175 degrees. At the same time, they can optimize their design for higher efficiency which is not feasible using fast recovery diodes commonly used in such high-temperature designs. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10-20 % lower conduction losses.

The PMEG SiGe devices (PMEGxGxELR/P) are housed in size- and thermally-efficient CFP3 and CFP5 packages that have become the industry standard for power diodes. By featuring a solid copper clip the packages’ thermal resistance is reduced and transfer of heat into the ambient environment is optimized, allowing small and compact PCB designs. Moreover, simple pin-to-pin replacements of Schottky and fast recovery diodes are possible when switching to SiGe technology.

Jan Fischer, Nexperia product manager commented: “Utilising Nexperia’s innovative Silicon Germanium technology gives engineers unprecedented options to design their power circuitry and finally build market-leading products. SiGe perfectly complements Nexperia’s power diodes offering which includes more than 100 Schottky and fast recovery rectifiers in the clip-bonded FlatPower (CFP) package. And, we continue to grow this portfolio to always offer our customers a part which is the ideal fit for their application."

The first four AEC-Q101-qualified 120 V SiGe rectifiers are already in mass production. A further eight 150 V and 200 V devices are sampling now. For more information on Nexperia's SiGe rectifiers, including product specs and datasheets, visit www.nexperia.com/sige-rectifiers or contact your local Nexperia representative.

2020053101 / 01.06.2020 / Elektronické součástky / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia establishes new Application Specific FET category to deliver optimized performance
‘ASFETs’ feature MOSFET parameters tailored for particular applications

Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
AEC-Q101-qualified DFN2020D-6 devices save up to 90% PCB space; side-wettable flanks enable automated inspection (AOI) and improve reliability

Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”.

New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Industry-benchmark performance devices now AEC-Q101 qualified - protecting infotainment, multimedia and ADAS systems.

Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia, the expert in essential semiconductors, today announced ‘Power Live’ a virtual conference on the 2nd and 3rd of July which will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.

Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia today announced the industry’s widest portfolio of automotive-qualified discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia launches P-channel MOSFETs in robust, space-saving LFPAK56 package
Nexperia, the expert in essential semiconductors, has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, with RDS(on) down to 10 mΩ (30 V)

Ultra-tiny MOSFETs from Nexperia are 36% smaller with lowest RDS(on)
Nexperia has launched a range of MOSFETs in the ultra-small DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest RDS(on) for their size and employ the commonly used pitch of 0.35 mm to simplify PCB assembly processes.

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